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MOSFET

Offering you a complete choice of products which include analog power mosfets, unisonic technology co uc3844l dip-8, unisonic technology co 4nm80g to-251, developer microelectronics dp2539mdip8, power mosfet module and unisonic technology co 7nm80l to-220f1.
ANALOG POWER MOSFETs

ANALOG POWER MOSFETs

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Product Brochure

Analog Power was founded in 2002 to focus on power management, and produce the optimum products for its customers. It has offices in the USA (San Jose, California), Hong Kong and Taiwan, with an extensive network of representatives to cover most of the worldwide semiconductor market.Analog Power brings you a range of application-specific solutions for power management. Our wide selection of products includes N-Channel and P-Channel MOSFETs, with on-resistance as low as 1.5 mΩ, in packages such as DFN3x3-8, SO-8, lead-less SO-8 (exposed pad), Dpak and TO-220.
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Unisonic Technology Co UC3844L DIP-8

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Product Details:
Number Of Pins8 Pins
Channel TypeN Channel Super Junction Mofset
Brand NameUTC
Current13A
Voltage supply900v
The UTC UC3844/3845 are high performance fixed frequency current mode controllers that specifically designed for Off-Line and DC to DC converter applications with minimal external parts count. The differences between UC3844 and UC3845 are the under-voltage lockout thresholds. The UC3844 ideally suited to off-line applications with UVLO thresholds of 16V(ON) and 10V(OFF), and UC3845 has UVLO thresholds of 8.4V(ON) and 7.6V(OFF) for lower voltage applications
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Unisonic Technology Co 4NM80G TO-251

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Product Details:
Voltage800V
Mounting TypeSMD
BrandUTC
Part Number4NM80G
Current4A
Item Code251
The UTC 4NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
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Developer Microelectronics DP2539MDIP8

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Product Details:
Mounting TypeThrough Hole
Number Of Pins14 Pins
ColorBlack
DesignStandard
MemoryStandard
Developing microelectronics involves designing, fabricating, and testing tiny electronic components and circuits that are integrated into semiconductor chips. This field encompasses a wide range of applications, from consumer electronics like smartphones and computers to specialized devices used in medical, automotive, aerospace, and industrial sectors. Here's a simplified overview of the steps involved in developing microelectronics: Design: Engineers design the circuitry and components using specialized software tools like CAD (Computer-Aided Design) software. This involves creating schematics, layout designs, and simulations to ensure the desired functionality and performance. Fabrication: Once the design is finalized, the next step is fabricating the semiconductor chips. This involves processes such as photolithography, etching, doping, and deposition to create the intricate patterns and structures on the silicon wafer. Testing and Characterization: After fabrication, the chips undergo rigorous testing to ensure they meet quality standards and specifications. This includes electrical testing to check for functionality, performance testing to assess speed and power consumption, and reliability testing to ensure long-term operation. Packaging: Once the chips pass testing, they are packaged to protect them from environmental factors and to facilitate their integration into electronic devices. Packaging also provides electrical connections between the chip and the outside world. Integration: The packaged chips are integrated into electronic products such as smartphones, computers, sensors, and other devices. This may involve further testing and calibration to ensure proper functionality within the final product. Throughout this process, developers must consider factors such as performance, power consumption, size, cost, and reliability to meet the requirements of the intended application. Advances in microelectronics technology continue to drive innovation and enable the development of smaller, faster, and more energy-efficient electronic devices.
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Power Mosfet Module

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Product Details:
Voltage4V
Transistor TypeNPN
Mounting TypeDIP
Brandutc
Item Code5546
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Unisonic Technology Co 7NM80L TO-220F1

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The UTC 7NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
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Unisonic Technology Co 6NM80G TO -252 T/R

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The UTC 6NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
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Unisonic Technology Co 12N90G

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The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC�s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N90 is universally applied in high efficiency switch mode power supply. ? FEATURES
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NC POWER NCE3050K

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The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ? VDS =30V,ID =50A RDS(ON) < 11m? @ VGS=10V (Typ:8m?) RDS(ON) < 16m? @ VGS=4.5V (Typ:10m?) ? High density cell design for ultra low Rdson ? Fully characterized Avalanche voltage and current ? Good stability and uniformity with high EAS ? Excellent package for good heat dissipation ? Special process technology for high ESD capability
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NC POWER NCE6080K

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The NCE6080EK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ? VDS =60V,ID =80A RDS(ON) <6.9m? @ VGS=10V ? High density cell design for ultra low Rdson ? Fully characterized avalanche voltage and current ? Good stability and uniformity with high EAS ? Excellent package for good heat dissipation
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SOP-8 External Mosfet Based 50W IC LC8680B

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HIGH PFC NON ISOLATED LED DRIVER IC . LED driver ICs are semiconductor devices designed specifically to power and control LEDs (Light Emitting Diodes). They provide the necessary voltage regulation, current control, and other functions required to efficiently drive LEDs in various lighting applications. LED driver ICs come in different configurations and features depending on the specific requirements of the application. Some common features of LED driver ICs include: Constant Current Output: LED driver ICs typically provide a constant current output to ensure stable brightness and prevent LED damage due to overcurrent. Efficiency: Many LED driver ICs are designed to be highly efficient to minimize power consumption and heat dissipation. Dimming Control: Some LED driver ICs support dimming functionality, allowing the brightness of the LEDs to be adjusted either through analog or digital control signals. Protection Features: LED driver ICs may include protection features such as overvoltage protection, overcurrent protection, and thermal shutdown to ensure reliable operation and prevent damage to the LEDs and the driver itself. Compatibility: LED driver ICs are available in various package types and configurations to suit different application requirements and design constraints. Popular manufacturers of LED driver ICs include Texas Instruments, Maxim Integrated, Analog Devices, ON Semiconductor, and many others.
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Unisonic Technology Co UT50P04G

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30V 8.5A 2.8W 24m?@10V,8.5A 1.4V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS
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DK5V45R20P SOP-8

DK5V45R20P SOP-8

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Unisonic Technology Co 2SA 5200

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